[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - Sub-60 mV/dec ferroelectric HZO MoS2 negative capacitance field-effect transistor with internal metal gate: The role of parasitic capacitance
Si, M.; Jiang, C.; Su, C.-J.; Tang, Y.-T.; Yang, L.; Chung, W.; Alam, M. A.; Ye, P. D.
- 作者Si, M.; Jiang, C.; Su, C.-J.; Tang, Y.-T.; Yang, L.; Chung, W.; Alam, M. A.; Ye, P. D.
- 文件大小586.47KB
- 发表时间2017
- DOI10.1109/IEDM.2017.8268447