[IEEE 2017 IEEE 12th International Conference on ASIC (ASICON) - Guiyang (2017.10.25-2017.10.28)] 2017 IEEE 12th International Conference on ASIC (ASICON) - Low frequency noise characteristics in p-Type MOSFET with multilayer WSe2 channel and Al2O3 back gate dielectric
Shen, Hui; Yuan, Huiwen; Bu, Sitong; He, Mingyue; Huang, Daming
- 作者Shen, Hui; Yuan, Huiwen; Bu, Sitong; He, Mingyue; Huang, Daming
- 文件大小541.55KB
- 发表时间2017
- DOI10.1109/ASICON.2017.8252490
- 页码371-374