Halogen-free vapor phase epitaxy for high-rate growth of GaN bulk crystals
- 期刊名称Applied Physics Express
- 作者Nakamura, Daisuke; Kimura, Taishi; Horibuchi, Kayo
- 卷第10卷
- 期第4期
- 印刷ISSN1882-0778
- 电子ISSN1882-0786
- 文件大小3274.45KB
- 发表时间2017-04-01
- DOI10.7567/APEX.10.045504
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