Degradation of a-InGaZnO TFTs Under Synchronized Gate and Drain Voltage Pulses
- 期刊名称IEEE Transactions on Electron Devices
- 作者Wang, Huaisheng; Wang, Mingxiang; Zhang, Dongli; Shan, Qi
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小1982.25KB
- 发表时间2018
- DOI10.1109/TED.2018.2794416
- 页码1-7
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