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Metallic-CN-Removal-Tolerant High-Yield Six-CN-MOSFET SRAM Cell for Carbon-Based Embedded Memory

Metallic-CN-Removal-Tolerant High-Yield Six-CN-MOSFET SRAM Cell for Carbon-Based Embedded Memory

Sun, Yanan; He, Weifeng; Mao, Zhigang; Jiao, Hailong; Kursun, Volkan

期刊名称IEEE Transactions on Electron Devices
作者Sun, Yanan; He, Weifeng; Mao, Zhigang; Jiao, Hailong; Kursun, Volkan
印刷ISSN0018-9383
电子ISSN1557-9646
文件大小2586.54KB
发表时间2018
DOI10.1109/TED.2018.2798667
页码1-9

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