A High-Temperature Gate Driver for Silicon Carbide
- 期刊名称IEEE Transactions on Industrial Electronics
- 作者Nayak, Parthasarathy; Pramanick, Sumit Kumar; Rajashekara, Kaushik
- 卷第65卷
- 期第3期
- 印刷ISSN0278-0046
- 电子ISSN1557-9948
- 文件大小2341.95KB
- 发表时间2018-3
- DOI10.1109/TIE.2017.2745465
- 页码1955-1964
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