发现好书期刊,享受阅读乐趣

海量图书期刊资源,随时随地畅享阅读乐趣

Surface-Potential-Based Silicon Carbide Power MOSFET Model for Circuit Simulation

Surface-Potential-Based Silicon Carbide Power MOSFET Model for Circuit Simulation

Shintani, Michihiro; Nakamura, Yohei; Oishi, Kazuki; Hiromoto, Masayuki; Hikihara, Takashi; Sato, Takashi
  • 期刊名称IEEE Transactions on Power Electronics
  • 作者Shintani, Michihiro; Nakamura, Yohei; Oishi, Kazuki; Hiromoto, Masayuki; Hikihara, Takashi; Sato, Takashi
  • 印刷ISSN0885-8993
  • 电子ISSN1941-0107
  • 文件大小4007.99KB
  • 发表时间2018
  • DOI10.1109/TPEL.2018.2805808
  • 页码1-1
← 返回【学霸图书馆】主页