Surface-Potential-Based Silicon Carbide Power MOSFET Model for Circuit Simulation
Shintani, Michihiro; Nakamura, Yohei; Oishi, Kazuki; Hiromoto, Masayuki; Hikihara, Takashi; Sato, Takashi
- 期刊名称IEEE Transactions on Power Electronics
- 作者Shintani, Michihiro; Nakamura, Yohei; Oishi, Kazuki; Hiromoto, Masayuki; Hikihara, Takashi; Sato, Takashi
- 印刷ISSN0885-8993
- 电子ISSN1941-0107
- 文件大小4007.99KB
- 发表时间2018
- DOI10.1109/TPEL.2018.2805808
- 页码1-1