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Dopant-driven enhancements in the optoelectronic properties of laser ablated ZnO: Ga thin films

Dopant-driven enhancements in the optoelectronic properties of laser ablated ZnO: Ga thin films

Hassan, Ali; Jin, Yuhua; Chao, Feng; Irfan, Muhammad; Jiang, Yijian
  • 期刊名称Journal of Applied Physics
  • 作者Hassan, Ali; Jin, Yuhua; Chao, Feng; Irfan, Muhammad; Jiang, Yijian
  • 卷第123卷
  • 期第16期
  • 印刷ISSN0021-8979
  • 电子ISSN1089-7550
  • 文件大小2476.41KB
  • 发表时间2018-04-28
  • DOI10.1063/1.5003686
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