A novel ternary content addressable memory design based on resistive random access memory with high intensity and low search energy
Han, Runze; Shen, Wensheng; Huang, Peng; Zhou, Zheng; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng
- 期刊名称Japanese Journal of Applied Physics
- 作者Han, Runze; Shen, Wensheng; Huang, Peng; Zhou, Zheng; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng
- 卷第57卷
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小1443.41KB
- 发表时间2018-04-01
- DOI10.7567/JJAP.57.04FE02