Macro-defect-free homoepitaxial GaN growth through halogen-free vapor-phase epitaxy on native GaN seeds

• 期刊名称Journal of Crystal Growth
• 作者Kimura, Taishi; Horibuchi, Kayo; Kataoka, Keita; Nakamura, Daisuke
• 印刷ISSN0022-0248
• 文件大小2073.77KB
• 发表时间2018-5
• DOI10.1016/j.jcrysgro.2018.05.002