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AIP Conference Proceedings [Author(s) INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONICS, MATERIALS AND APPLIED SCIENCE - Secunderabad, India (22–23 December 2017)] - Analysis of source/drain engineered 22nm FDSOI using high-k spacers

AIP Conference Proceedings [Author(s) INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONICS, MATERIALS AND APPLIED SCIENCE - Secunderabad, India (22–23 December 2017)] - Analysis of source/drain engineered 22nm FDSOI using high-k spacers

Malviya, Abhishek Kumar; Chauhan, R. K.

作者Malviya, Abhishek Kumar; Chauhan, R. K.
卷第1952卷
印刷ISSN0094-243X
文件大小2812.80KB
发表时间2018
DOI10.1063/1.5031963

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