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Characterization of recrystallized depth and dopant distribution in laser recovery of grinding damage in single-crystal silicon

Characterization of recrystallized depth and dopant distribution in laser recovery of grinding damage in single-crystal silicon

Niitsu, Keiichiro; Tayama, Yu; Kato, Taketoshi; Maehara, Hidenobu; Yan, Jiwang

期刊名称Materials Science in Semiconductor Processing
作者Niitsu, Keiichiro; Tayama, Yu; Kato, Taketoshi; Maehara, Hidenobu; Yan, Jiwang
卷第82卷
印刷ISSN1369-8001
文件大小3102.75KB
发表时间2018-08
DOI10.1016/j.mssp.2018.03.029
页码54-61

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