Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 °C
- 期刊名称Applied Surface Science
- 作者Han, W.T.; Liu, H.P.; Li, B.S.
- 卷第455卷
- 印刷ISSN0169-4332
- 文件大小1715.04KB
- 发表时间2018-10
- DOI10.1016/j.apsusc.2018.05.228
- 页码433-437
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