(Invited)
GaN Buried Channel Normally Off MOSHEMT: Design Optimization and Experimental Integration on Silicon Substrate
Soman, Rohith; Sharma, Manish; Ramesh, Nayana; Nath, Digbijoy; Muralidharan, R; Bhat, K N; Raghavan, Srinivasan; Bhat, Navakanta
- 期刊名称ECS Transactions
- 作者Soman, Rohith; Sharma, Manish; Ramesh, Nayana; Nath, Digbijoy; Muralidharan, R; Bhat, K N; Raghavan, Srinivasan; Bhat, Navakanta
- 卷第86卷
- 期第10期
- 印刷ISSN1938-6737
- 电子ISSN1938-5862
- 文件大小1001.72KB
- 发表时间2018-07-23
- DOI10.1149/08610.0161ecst
- 页码161-168