Bias temperature instability and condition monitoring in SiC power MOSFETs
- 期刊名称Microelectronics Reliability
- 作者Ortiz Gonzalez, J.; Alatise, O.
- 印刷ISSN0026-2714
- 文件大小1667.44KB
- 发表时间2018-09
- DOI10.1016/j.microrel.2018.06.045
- 页码557-562
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