Characteristics of the Bipolar Resistive Switching Behavior in Memory Device with Au/ZnO/ITO Structure
- 期刊名称Chinese Journal of Physics
- 作者Wang, Hongjun; Zhu, Yuanyuan; Liu, Yong
- 印刷ISSN0577-9073
- 文件大小671.59KB
- 发表时间2018-10
- DOI10.1016/j.cjph.2018.10.019
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