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Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs

Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs

Kilpi, Olli-Pekka; Svensson, Johannes; Lind, Erik; Wernersson, Lars-Erik
  • 期刊名称IEEE Journal of the Electron Devices Society
  • 作者Kilpi, Olli-Pekka; Svensson, Johannes; Lind, Erik; Wernersson, Lars-Erik
  • 电子ISSN2168-6734
  • 文件大小939.65KB
  • 发表时间2018
  • DOI10.1109/JEDS.2018.2878659
  • 页码1-1
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