On the ESD Behavior of Large-Area CVD Graphene Transistors: Physical Insights and Technology Implications
- 期刊名称IEEE Transactions on Electron Devices
- 作者Kranthi, Nagothu Karmel; Mishra, Abhishek; Meersha, Adil; Shrivastava, Mayank
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小2897.70KB
- 发表时间2018
- DOI10.1109/TED.2018.2877693
- 页码1-9
[IEEE 2018 IEEE International Conference on Smart Energy Grid Engineering (SEGE) - Oshawa, ON, Canada (2018.8.12-2018.8.15)] 2018 IEEE International Conference on Smart Energy Grid Engineering (SEGE) - SEGE 2018 the 6th IEEE International Conference on Smart Energy Grid Engineering (SEGE)2018
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[IEEE 2018 IEEE International Conference on Smart Energy Grid Engineering (SEGE) - Oshawa, ON, Canada (2018.8.12-2018.8.15)] 2018 IEEE International Conference on Smart Energy Grid Engineering (SEGE) - SEGE 2018 Preface2018
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