Optoelectronic properties of high-Si-content-Ge
1
−x
–
y
Si
x
Sn
y
/Ge
1−
x
Sn
x
/Ge
1−
x–y
Si
x
Sn
y
double heterostructure
Fukuda, Masahiro; Rainko, Denis; Sakashita, Mitsuo; Kurosawa, Masashi; Buca, Dan; Nakatsuka, Osamu; Zaima, Shigeaki
- 期刊名称Semiconductor Science and Technology
- 作者Fukuda, Masahiro; Rainko, Denis; Sakashita, Mitsuo; Kurosawa, Masashi; Buca, Dan; Nakatsuka, Osamu; Zaima, Shigeaki
- 卷第33卷
- 期第12期
- 印刷ISSN0268-1242
- 电子ISSN1361-6641
- 文件大小1347.17KB
- 发表时间2018-12-01
- DOI10.1088/1361-6641/aaebb5