Asymmetric Resistive Switching Dynamics in BaTiO 3 Tunnel Junctions
- 期刊名称Advanced Electronic Materials
- 作者Qian, Mengdi; Fina, Ignasi; Sánchez, Florencio; Fontcuberta, Josep
- 印刷ISSN2199-160X
- 文件大小1241.86KB
- 发表时间2018-11-14
- DOI10.1002/aelm.201800407
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