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Epitaxial growth of Sb-doped Ge layers on ferromagnetic Fe
<sub/>3</sub>
Si for vertical semiconductor spintronic devices

Epitaxial growth of Sb-doped Ge layers on ferromagnetic Fe ₃ Si for vertical semiconductor spintronic devices

Shiihara, T; Oki, S; Sakai, S; Ikawa, M; Yamada, S; Hamaya, K

期刊名称Semiconductor Science and Technology
作者Shiihara, T; Oki, S; Sakai, S; Ikawa, M; Yamada, S; Hamaya, K
卷第33卷
期第10期
印刷ISSN0268-1242
电子ISSN1361-6641
文件大小831.65KB
发表时间2018-10-01
DOI10.1088/1361-6641/aade71

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