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[IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao, China (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - High Mobility 4H-SiC MOSFET

[IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao, China (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - High Mobility 4H-SiC MOSFET

OrNeill, A.; Arith, F.; Urresti, J.; Vasilevskiy, K.; Wright, N.; Olsen, S.

作者OrNeill, A.; Arith, F.; Urresti, J.; Vasilevskiy, K.; Wright, N.; Olsen, S.
文件大小3275.46KB
发表时间2018
DOI10.1109/ICSICT.2018.8564911
页码1-4

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