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[IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao, China (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Wide SOA and High Reliability 60-100 V LDMOS Transistors with Low Switching Loss and Low Specific On-Resistance

[IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao, China (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Wide SOA and High Reliability 60-100 V LDMOS Transistors with Low Switching Loss and Low Specific On-Resistance

Matsuda, Jun-ichi; Kuwana, Anna; Kojima, Jun-ya; Tsukiji, Nobukazu; Kobayashi, Haruo
  • 作者Matsuda, Jun-ichi; Kuwana, Anna; Kojima, Jun-ya; Tsukiji, Nobukazu; Kobayashi, Haruo
  • 文件大小2714.36KB
  • 发表时间2018
  • DOI10.1109/ICSICT.2018.8564999
  • 页码1-3
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