[IEEE 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) - Cork, Ireland (2018.7.23-2018.7.26)] 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) - Type-II p-GaAsSb/n-InAs Nanowires under Conditions for Tunnel Junction Formation
- 作者Kawaguchi, K.; Takahashi, T.; Okamoto, N.; Sato, M.; Suhara, M.
- 文件大小1607.07KB
- 发表时间2018
- DOI10.1109/nano.2018.8626325
- 页码1-4
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