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[IEEE 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Xi'an, China (2018.5.16-2018.5.18)] 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Influence of Parasitic Capacitances on Transient Current Distribution of Paralleled SiC MOSFETs

[IEEE 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Xi'an, China (2018.5.16-2018.5.18)] 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Influence of Parasitic Capacitances on Transient Current Distribution of Paralleled SiC MOSFETs

Ke, Junji; Huang, Huazhen; Sun, Peng; Abuogo, James; Zhao, Zhibin; Cui, Xiang
  • 作者Ke, Junji; Huang, Huazhen; Sun, Peng; Abuogo, James; Zhao, Zhibin; Cui, Xiang
  • 文件大小742.74KB
  • 发表时间2018
  • DOI10.1109/wipdaasia.2018.8734566
  • 页码1-6
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