[IEEE 2018 22nd International Conference on Ion Implantation Technology (IIT) - Würzburg, Germany (2018.9.16-2018.9.21)] 2018 22nd International Conference on Ion Implantation Technology (IIT) - Two-Step Ion Implantation used for Activating Boron Atoms in Silicon at 300°C
Sameshima, Toshiyuki; Uehara, Takuma; Sugawara, Takashi; Hasumi, Masahiko; Nagao, Tomokazu; Yasuta, Keisuke; Inouchi, Yutaka; Tatemichi, Junichi
- 作者Sameshima, Toshiyuki; Uehara, Takuma; Sugawara, Takashi; Hasumi, Masahiko; Nagao, Tomokazu; Yasuta, Keisuke; Inouchi, Yutaka; Tatemichi, Junichi
- 文件大小307.41KB
- 发表时间2018
- DOI10.1109/iit.2018.8807972
- 页码46-49