[Springer Proceedings in Physics] The Physics of Semiconductor Devices Volume 215 (Proceedings of IWPSD 2017) || Oxygen Ion Implantation Induced Effects in GaN Epilayer

• 作者Sharma, R. K.; Rawal, D.S.
• 文件大小270.67KB
• 发表时间2019
• DOI10.1007/978-3-319-97604-4_46
• 页码301-305