InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

• 期刊名称Journal of Applied Physics
• 作者Yokoyama, Masafumi; Yokoyama, Haruki; Takenaka, Mitsuru; Takagi, Shinichi
• 卷第125卷
• 期第11期
• 印刷ISSN0021-8979
• 电子ISSN1089-7550
• 文件大小4268.79KB
• 发表时间2019-03-21
• DOI10.1063/1.5049518