Influence of various NO annealing conditions on N-type and P-type 4H-SiC MOS capacitors

Jia, Yifan; Lv, Hongliang; Tang, Xiaoyan; Han, Chao; Song, Qingwen; Zhang, Yimen; Zhang, Yuming; Dimitrijev, Sima; Han, Jisheng; Haasmann, Daniel

期刊名称Journal of Materials Science: Materials in Electronics
作者Jia, Yifan; Lv, Hongliang; Tang, Xiaoyan; Han, Chao; Song, Qingwen; Zhang, Yimen; Zhang, Yuming; Dimitrijev, Sima; Han, Jisheng; Haasmann, Daniel
印刷ISSN0957-4522
电子ISSN1573-482X
文件大小4179.48KB
发表时间2019-4-26
DOI10.1007/s10854-019-01368-z

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