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Effects of ion irradiation on the structural and electrical properties of HfO2/SiON/Si p-metal oxide semiconductor capacitors

Effects of ion irradiation on the structural and electrical properties of HfO2/SiON/Si p-metal oxide semiconductor capacitors

Manikanthababu, N.; Saikiran, V.; Basu, T.; Prajna, K.; Vajandar, S.; Pathak, A.P.; Panigrahi, B.K.; Osipowicz, T.; Rao, S.V.S. Nageswara
  • 期刊名称Thin Solid Films
  • 作者Manikanthababu, N.; Saikiran, V.; Basu, T.; Prajna, K.; Vajandar, S.; Pathak, A.P.; Panigrahi, B.K.; Osipowicz, T.; Rao, S.V.S. Nageswara
  • 印刷ISSN0040-6090
  • 文件大小6159.21KB
  • 发表时间2019-3
  • DOI10.1016/j.tsf.2019.03.009
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