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On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect

On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect

Goldman, E. I.; Nabiev, A.; Naryshkina, V. G.; Chucheva, G. V.

期刊名称Semiconductors
作者Goldman, E. I.; Nabiev, A.; Naryshkina, V. G.; Chucheva, G. V.
卷第53卷
期第1期
印刷ISSN1063-7826
电子ISSN1090-6479
文件大小286.05KB
发表时间2019-1
DOI10.1134/S1063782619010093
页码85-88

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