Change of characteristics of n-GaN MOS capacitors with Hf-rich HfSiOx gate dielectrics by post-deposition annealing
- 期刊名称Microelectronic Engineering
- 作者Maeda, Erika; Nabatame, Toshihide; Yuge, Kazuya; Hirose, Masafumi; Inoue, Mari; Ohi, Akihiko; Ikeda, Naoki; Shiozaki, Koji; Kiyono, Hajime
- 卷第216卷
- 印刷ISSN0167-9317
- 文件大小981.44KB
- 发表时间2019-08
- DOI10.1016/j.mee.2019.111036
Patents AlertFlow Measurement and Instrumentation · 2002
Impact, <i>H</i> , and AuthorshipHaslam, Nick · Measurement: Interdisciplinary Research & Perspective · 2012
Silicon sensorsMiddelhoek, S; Bellekom, A A; Dauderstadt, U; French, P J; Hout, S R in `t; Kindt, W; Riedijk, F; Vellekoop, M J · Measurement Science and Technology · 1995
Letter from the EditorHauptmann, Peter · Measurement Science and Technology · 2009
Quantifying image qualitySharp, P F · Clinical Physics and Physiological Measurement · 1990
Induction coil sensors—a reviewTumanski, Slawomir · Measurement Science and Technology · 2007
A History of Effect Size IndicesHuberty, C. J · Educational and Psychological Measurement · 2002
Magnetic induction tomographyGriffiths, H · Measurement Science and Technology · 2001