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First Principles Study of the Stability and Diffusion Mechanism of a Carbon Vacancy in the Vicinity of a SiO
<sub/>2</sub>
/4H‐SiC Interface

First Principles Study of the Stability and Diffusion Mechanism of a Carbon Vacancy in the Vicinity of a SiO ₂ /4H‐SiC Interface

Alsnani, Hind; Goss, J. P.; Briddon, P. R.; Rayson, M. J.; Horsfall, A. B.

期刊名称physica status solidi (a)
作者Alsnani, Hind; Goss, J. P.; Briddon, P. R.; Rayson, M. J.; Horsfall, A. B.
印刷ISSN1862-6300
电子ISSN1862-6319
文件大小1307.89KB
发表时间2019-07-26
DOI10.1002/pssa.201900328

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