Evidence of GaN HEMT Schottky Gate Degradation After Gamma Irradiation

Zheng, Xiang; Feng, Shiwei; Peng, Chao; Lin, Gang; Bai, Lin; Li, Xuan; Yang, Ying; Pan, Shijie; Hu, Zhaoxu; Li, Xiaoyang; Zhang, Yamin

期刊名称IEEE Transactions on Electron Devices
作者Zheng, Xiang; Feng, Shiwei; Peng, Chao; Lin, Gang; Bai, Lin; Li, Xuan; Yang, Ying; Pan, Shijie; Hu, Zhaoxu; Li, Xiaoyang; Zhang, Yamin
印刷ISSN0018-9383
电子ISSN1557-9646
文件大小2461.38KB
发表时间2019
DOI10.1109/TED.2019.2928560
页码1-5

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