发现好书期刊,享受阅读乐趣

海量图书期刊资源,随时随地畅享阅读乐趣

[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Performance and Reliability Co-design of LDMOS-SCR for Self-Protected High Voltage Applications On-Chip

[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Performance and Reliability Co-design of LDMOS-SCR for Self-Protected High Voltage Applications On-Chip

Kranthi, Nagothu Karmel; Kumar, B. Sampath; Salman, Akram; Boselli, Gianluca; Shrivastava, Mayank
  • 作者Kranthi, Nagothu Karmel; Kumar, B. Sampath; Salman, Akram; Boselli, Gianluca; Shrivastava, Mayank
  • 文件大小1109.45KB
  • 发表时间2019
  • DOI10.1109/ISPSD.2019.8757641
  • 页码407-410
← 返回【学霸图书馆】主页