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Gate Drive Technology Evaluation and Development to Maximize Switching Speed of SiC Discrete Devices and Power Modules in Hard Switching Applications

Gate Drive Technology Evaluation and Development to Maximize Switching Speed of SiC Discrete Devices and Power Modules in Hard Switching Applications

Gui, Handong; Zhang, Zheyu; Chen, Ruirui; Niu, Jiahao; Tolbert, Leon M.; Wang, Fei Fred; Costinett, Daniel; Blalock, Benjamin J.; Choi, Benjamin B.
  • 期刊名称IEEE Journal of Emerging and Selected Topics in Power Electronics
  • 作者Gui, Handong; Zhang, Zheyu; Chen, Ruirui; Niu, Jiahao; Tolbert, Leon M.; Wang, Fei Fred; Costinett, Daniel; Blalock, Benjamin J.; Choi, Benjamin B.
  • 印刷ISSN2168-6777
  • 电子ISSN2168-6785
  • 文件大小2084.58KB
  • 发表时间2019
  • DOI10.1109/JESTPE.2019.2937855
  • 页码1-1
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