Growth and Properties of Intentionally Carbon-Doped GaN Layers

Richter, Eberhard; Beyer, Franziska C.; Zimmermann, Friederike; Gärtner, Günter; Irmscher, Klaus; Gamov, Ivan; Heitmann, Johannes; Weyers, Markus; Tränkle, Günther

期刊名称Crystal Research and Technology
作者Richter, Eberhard; Beyer, Franziska C.; Zimmermann, Friederike; Gärtner, Günter; Irmscher, Klaus; Gamov, Ivan; Heitmann, Johannes; Weyers, Markus; Tränkle, Günther
印刷ISSN0232-1300
文件大小1831.71KB
发表时间2019-10-22
DOI10.1002/crat.201900129

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Growth and Properties of Intentionally Carbon-Doped GaN Layers