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Extended Gate Ion-Sensitive Field-Effect Transistors Using Al
<sub/>2</sub>
O
<sub/>3</sub>
/Hexagonal Boron Nitride Nanolayers for pH Sensing

Extended Gate Ion-Sensitive Field-Effect Transistors Using Al ₂ O ₃ /Hexagonal Boron Nitride Nanolayers for pH Sensing

WEI, WEI; Zeng, Zhe; Liao, Wugang; Chim, Wai Kin; Zhu, Chunxiang

期刊名称ACS Applied Nano Materials
作者WEI, WEI; Zeng, Zhe; Liao, Wugang; Chim, Wai Kin; Zhu, Chunxiang
印刷ISSN2574-0970
电子ISSN2574-0970
文件大小629.89KB
发表时间2019-12-23
DOI10.1021/acsanm.9b02037

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