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[IEEE 2019 IEEE 19th International Conference on Communication Technology (ICCT) - Xi'an, China (2019.10.16-2019.10.19)] 2019 IEEE 19th International Conference on Communication Technology (ICCT) - Design of X-band 4×4 On-chip Butler Matrix Based on 0.18µm SiGe BiCMOS Process

[IEEE 2019 IEEE 19th International Conference on Communication Technology (ICCT) - Xi'an, China (2019.10.16-2019.10.19)] 2019 IEEE 19th International Conference on Communication Technology (ICCT) - Design of X-band 4×4 On-chip Butler Matrix Based on 0.18µm SiGe BiCMOS Process

Tao, Xiaohui; Cao, Rui; Li, Zhuang; Rong, Dawei; Jiang, Lihui; Sun, Liguo
  • 作者Tao, Xiaohui; Cao, Rui; Li, Zhuang; Rong, Dawei; Jiang, Lihui; Sun, Liguo
  • 文件大小579.08KB
  • 发表时间2019
  • DOI10.1109/ICCT46805.2019.8947045
  • 页码805-809
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