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Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

Noé, Pierre; Verdy, Anthonin; d’Acapito, Francesco; Dory, Jean-Baptiste; Bernard, Mathieu; Navarro, Gabriele; Jager, Jean-Baptiste; Gaudin, Jérôme; Raty, Jean-Yves
  • 期刊名称Science Advances
  • 作者Noé, Pierre; Verdy, Anthonin; d’Acapito, Francesco; Dory, Jean-Baptiste; Bernard, Mathieu; Navarro, Gabriele; Jager, Jean-Baptiste; Gaudin, Jérôme; Raty, Jean-Yves
  • 卷第6卷
  • 期第9期
  • 电子ISSN2375-2548
  • 文件大小1411.13KB
  • 发表时间2020-02
  • DOI10.1126/sciadv.aay2830
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