Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors
- 期刊名称IEEE Transactions on Electron Devices
- 作者Liu, Jiangwei; Teraji, Tokuyuki; Da, Bo; Ohsato, Hirotaka; Koide, Yasuo
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小1211.75KB
- 发表时间2020
- DOI10.1109/TED.2020.2972979
- 页码1-1
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