Atomic-layer etching of GaN by using an HBr neutral beam

• 期刊名称Journal of Vacuum Science & Technology A
• 作者Ohori, Daisuke; Sawada, Takahiro; Sugawara, Kenta; Okada, Masaya; Nakata, Ken; Inoue, Kazutaka; Sato, Daisuke; Kurihara, Hideyuki; Samukawa, Seiji
• 卷第38卷
• 期第3期
• 印刷ISSN0734-2101
• 电子ISSN1520-8559
• 文件大小2830.89KB
• 发表时间2020-05
• DOI10.1116/6.0000126