Thick Epitaxial Î±-Ga2O3:Sn Layers on a Patterned Sapphire Substrate

Nikolaev, V. I.; Pechnikov, A. I.; Guzilova, L. I.; Chikiryaka, A. V.; Shcheglov, M. P.; Nikolaev, V. V.; Stepanov, S. I.; Vasilâev, A. A.; Shchemerov, I. V.; Polyakov, A. Ya.

期刊名称Technical Physics Letters
作者Nikolaev, V. I.; Pechnikov, A. I.; Guzilova, L. I.; Chikiryaka, A. V.; Shcheglov, M. P.; Nikolaev, V. V.; Stepanov, S. I.; Vasilâev, A. A.; Shchemerov, I. V.; Polyakov, A. Ya.
卷第46卷
期第3期
印刷ISSN1063-7850
电子ISSN1090-6533
文件大小388.26KB
发表时间2020-3
DOI10.1134/S106378502003013X
页码228-230

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Thick Epitaxial Î±-Ga2O3:Sn Layers on a Patterned Sapphire Substrate