[IEEE 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - San Jose, CA, USA (April 17-21, 2005)] 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - Effect of layout orientation on the performance and reliabiltiy of high voltage N-LDMOS in standard submicron logic STI CMOS processBin Wang, ; Hoc Nguyen, ; Mavoori, J.; Horch, A.; Yanjun Ma, ; Humes, T.; Paulsen, R. · 2005