Tantalum-gate thin-film SOI nMOS and pMOS for low-power applicationsShimada, H.; Hirano, Y.; Ushiki, T.; Ino, K.; Ohmi, T. · 1997

Reliable tantalum-gate fully-depleted-SOI MOSFET technology featuring low-temperature processingUshiki, T.; Mo-Chiun Yu; Hirano, Y.; Shimada, H.; Morita, M.; Ohmi, T. · 1997

[IEEE International Electron Devices Meeting - Washington, DC, USA (10-13 Dec. 1995)] Proceedings of International Electron Devices Meeting - Threshold voltage adjustment in SOI MOSFETs by employing tantalum for gate materialShimada, H.; Hirano, Y.; Ushiki, T.; Ohmi, T. · 1995