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- 期刊名称Journal of Education for Business
- 卷第18卷
- 期第7期
- 印刷ISSN0883-2323
- 电子ISSN1940-3356
- 文件大小193.37KB
- 发表时间1943-03
- DOI10.1080/08832323.1943.10115110
- 页码33-33
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[IEEE International Electron Devices Meeting - Washington, DC, USA (10-13 Dec. 1995)] Proceedings of International Electron Devices Meeting - Threshold voltage adjustment in SOI MOSFETs by employing tantalum for gate materialShimada, H.; Hirano, Y.; Ushiki, T.; Ohmi, T. · 1995