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Influence of AsH[sub 3], PH[sub 3],and B[sub 2]H[sub 6] on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH[sub 4]-H[sub 2] Mixture

Influence of AsH[sub 3], PH[sub 3],and B[sub 2]H[sub 6] on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH[sub 4]-H[sub 2] Mixture

Eversteyn, F. C.; Put, B. H.

期刊名称Journal of The Electrochemical Society
作者Eversteyn, F. C.; Put, B. H.
卷第120卷
期第1期
印刷ISSN0013-4651
文件大小863.99KB
发表时间1973
DOI10.1149/1.2403378

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