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High-temperature hall effect in epitaxial doped gallium arsenideV. I. Khokhlov; S. A. Dvoretskii; Yu. G. Sidorov · 1975
Electrophysical characteristics of accidental-doping defects in epitaxial n-type gallium arsenideV. I. Khokhlov; S. A. Dvoretskii; Yu. G. Sidorov; A. F. Kravchenko · 1974