Erratum
- 作者Guanghan Fan; J Iwan Davies; Nicholas Maung; Maxwell J Parrott; John O Williams
- 卷第16卷
- 期第3期
- 印刷ISSN0361-5235
- 电子ISSN1543-186X
- 文件大小15.08KB
- 发表时间1987-05
- DOI10.1007/bf02655489
- 页码209-209
同作者推荐
Low-Temperature Si Epitaxy by Photochemical Vapor Deposition with $bf SiH_{2}Cl_{2}$Oshima, Takayuki; Alonso, Juan Carlos; Yamada, Akira; Konagai, Makoto; Takahashi, Kiyoshi · Japanese Journal of Applied Physics · 1994
Effects of SiH2Cl2 on low-temperature (≤200°C) Si epitaxy by photochemical vapor depositionTakayuki Oshima; Masashi Sano; Akira Yamada; Makoto Konagai; Kiyoshi Takahashi · 1994