![[IEEE 2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Osaka, Japan (2011.05.19-2011.05.20)] 2011 International Meeting for Future of Electron Devices - Drain current - gate voltage characteristics of Si MOSFETs fabricated on Si-on-SiC wafers]()
[IEEE 2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Osaka, Japan (2011.05.19-2011.05.20)] 2011 International Meeting for Future of Electron Devices - Drain current - gate voltage characteristics of Si MOSFETs fabricated on Si-on-SiC wafersAraki, Ryosuke; Shimizu, Hideo; Kurumi, Takamasa; Kinoshita, Hiroyuki; Yoshimoto, Masahiro · 2011